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FIZIKA A 12 (2003) 3 , 115 - 126
 
JUNCTION FORMATION AND CHARACTERISTICS OF n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2
POLYCRYSTALLINE THIN FILMS
M. A. REDWANa, L. I. SOLIMANb, E. H. ALYa
and H. A. ZAYEDa
aUniversity College for Art, Science and Education, Ain Shams
University, Cairo, Egypt
bNational Research Center, Cairo, Egypt
Received 23 January 2003; revised manuscript received 17 September
Accepted 29 September 2003 Online 19 April 2004
CuGa0.3In0.7Se2 polycrystalline thin films were
prepared by thermal evaporation under vacuum of about 10-4Pa,
with a deposition rate of about 200 nm/min. The selenization of these films at 723 K
improves their properties. The activation energy as well as the optical energy gap of the
investigated samples decreased with annealing and selenization. Polycrystalline thin film
n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2
heterojunctions were fabricated and the current density - voltage and capacitance -
voltage characteristics of the junction were studied. The heterojunctions were exposed to
light, and under illumination of 1000 mWcm-2, the
open circuit voltage was 580 mV, the short circuit current density 4.8 mAcm-2, the fill factor 0.682 and the electrical conversion
efficiency was 1.898% for cells of active area of 1 cm2.
PACS numbers: 42.79.Ek, 73.40.Kp, 84.60.Jt
UDC 53.082.52
Keywords: CuGa0.3In0.7Se2, polycrystalline thin film,
n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2,
heterojunction, solar cell, conversion efficiency
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