FIZIKA A 4 (1995) 2, 397-401

size 210 kB

ELASTIC REFLECTION SPECTRA ON POROUS p-TYPE SILICON LAYER (PSL) SURFACE

CHRISTINE ROBERT*, BERNARD GRUZZA*, LUC BIDEUX*, GYÖRGY GERGELY**, MIKLOS MENYHARD** and EVA VAZSONYI***
*LASMEA, Universite Blaise-Pascal de Clermont-Ferrand. F-63177 Aubiere, France
**Res. Inst. Technical Physics, Hung. Acad. Sci., H-1325 Budapest, POB 76, Hungary
***KFKI Mat. Res. Inst., Hung. Acad. Sci. H-1525 POB 49, Hungary

Received 7 April 1995

PSL samples have been formed on p type Si(100) wafers by an electrochemical procedure. The dependence of the elastic electron reflection coefficient, re(E), on porosity (P) was determined by elastic peak electron spectroscopy (EPES). The spectra were measured in absolute units (%) with a retarding field analyser and spectrometer corrections. They exhibited systematic decrease of intensity with porosity. HF treatment of samples produced a dramatic decrease of re(E) in the low energy (40-100 eV) range, due to removal of the native SiO2 and formation of Si-H bonds on the surface. It can be explained by multiple elastic reflection and attenuation of electrons by H adatoms on the pore walls. The constribution of pores to re(E) was considerable and increasing with porosity. The porous layers and interfaces have been studied by Auger electron spectroscopy (AES) with Ar+ ion bombardment depth profiling of high resolution.

UDC 538.971
PACS 79.20.-m, 81.15.Pq
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