FIZIKA A 5 (1996) 4, 197-204

ELECTRICAL AND SWITCHING PROPERTIES OF ZnIn₂Se₄ AMORPHOUS THIN FILMS

LAILA I. SOLIMAN and HAMDIA A. ZAYED^a
Solid State Physics Lab., National Research Center, Dokki, Cairo, Egypt
^aUniversity College for Girls, Ain Shams University, Physics Department Heliopolis, Cairo, Egypt

Received 4 December 1996

In this work electrical and switching properties of amorphous ZnIn₂Se₄ thin films have been studied. The amorphous films were obtained by thermal evaporation in vacuum, of polycrystalline materials, on glass or pyrographite substrates. From electrical measurements, it was found that for all films the dark electrical resistivity decreases with an increase of film thickness and temperature. The ZnIn₂Se₄ films exhibit nonlinear I-V characteristics and switching phenomena. The threshold voltage decreases with increasing temperature and increases with increasing film thickness.

UDC 539.213
PACS 61.43.Dq

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