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FIZIKA A 9 (2000) 1 , 37-46
 
INTRINSIC POINT DEFECTS IN POLYCRYSTALLINE SILICON
BRANKO PIVACa, VESNA BORJANOVIĆb and IVANA
KOVAČEVIĆa
aR. Bošković Institute, P. O. Box 180, HR-10002 Zagreb,
Croatia
bFaculty of Electrical Engineering and Computing, Unska 3,
HR-10000 Zagreb, Croatia
Dedicated to Professor Boran Leontić on the occasion of his 70th
birthday
Received 29 February 2000; revised manuscript received 5 May 2000
Accepted 10 May 2000
The behaviour of intrinsic point defects in silicon is still an unresolved problem. As
they interact with other impurities and influence their diffusion, intrinsic point defects
affect electronic properties of the material. Of particular importance is the intrinsic
point defect behaviour in polycrystalline silicon due to the presence of very high
concentration of structural defects, such as dislocations and grain boundaries of various
kinds. A direct observation of point defects is very difficult and therefore it is shown
that monitoring of carbon concentration is a very good measure of point defects behaviour.
Polycrystalline material supersaturated with carbon represents a particular case when
self-interstitials and vacancy generation is significantly retarded up to the highest
temperatures, leading therefore to the preservation of carbon supersaturation upon thermal
treatments.
PACS numbers: 78.50.Ge
UDC 537.312, 537.311.322
Keywords: polycrystalline silicon, intrinsic point defects, interaction with other
impurities, electronic properties, supersaturation with carbon
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