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FIZIKA A 9 (2000) 2 , 67-74
 
DENSITY AND VISCOSITY OF AgGaSe2 SEMICONDUCTOR COMPOUND IN
SOLID AND LIQUID STATES
K. A. SHARAF, A. H. ABOU EL-ELA, and A-ABD EL-MABOUD
Physics Department, Faculty of Science for Girls, Al-Azhar
University, Nasr City, Cairo, Egypt
Received 15 November 1999; revised manuscript received 1 July 2000
Accepted 6 July 2000
The density and kinematic viscosity of AgGaSe2 were investigated in the
solid and liquid states in the temperature range 690 - 930 °C.
Density and dynamic viscosity measurements were carried out using the thermometer method
and the rotating cylinder method. Experimental data show that the dependence of viscosity
on temperature has an activation character and that logarithm of viscosity vs. reciprocal
absolute temperature can be approximated by two straight lines corresponding to activation
energies 0.36 eV and 0.19 eV in the solid and liquid states, respectively. The temperature
dependence of the free volume was calculated and it was found that it decreases linearly
with temperature. The results are explained on the basis of the free-volume model.
PACS numbers: 61.43.Dq, 66.20.+d
UDC 531.82
Keywords: solid and liquid AgGaSe2, density and kinematic viscosity,
dependence on temperature, activation energies, free volume
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