FIZIKA A 12 (2003) 3 , 115 - 126

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M. A. REDWANa, L. I. SOLIMANb, E. H. ALYa and H. A. ZAYEDa

aUniversity College for Art, Science and Education, Ain Shams University, Cairo, Egypt
bNational Research Center, Cairo, Egypt

Received 23 January 2003; revised manuscript received 17 September
Accepted 29 September 2003   Online 19 April 2004

CuGa0.3In0.7Se2 polycrystalline thin films were prepared by thermal evaporation under vacuum of about 10-4Pa, with a deposition rate of about 200 nm/min. The selenization of these films at 723 K improves their properties. The activation energy as well as the optical energy gap of the investigated samples decreased with annealing and selenization. Polycrystalline thin film n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 heterojunctions were fabricated and the current density - voltage and capacitance - voltage characteristics of the junction were studied. The heterojunctions were exposed to light, and under illumination of 1000 mWcm-2, the open circuit voltage was 580 mV, the short circuit current density 4.8 mAcm-2, the fill factor 0.682 and the electrical conversion efficiency was 1.898% for cells of active area of 1 cm2.

PACS numbers: 42.79.Ek, 73.40.Kp, 84.60.Jt
UDC 53.082.52

Keywords: CuGa0.3In0.7Se2, polycrystalline thin film, n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2, heterojunction, solar cell, conversion efficiency

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