|
| |
FIZIKA A 12 (2003) 4 , 195 - 202
 
PHONON CONDUCTION IN HEAVILY DOPED N-TYPE SILICON
M. K. ROY AND M. HOQUE
Department of Physics, University of Chittagong, Chittagong, Bangladesh
Received 25 July 2003; Accepted 15 December 2003
Online 19 April 2004
In n-type semiconductors, if the donor concentration Nex
> Nc, the critical concentration of donors, the
sample becomes metal. The expression for electron-phonon relaxation rate in such
semiconductors in the self-consistent method derived by T. Sota and K. Suzuki, modified in
the recent paper of M. K. Roy, is used to take into account a realistic picture of the
scattered phonons in heavily doped n-type silicon. Angular average of the deformation
potential for different polarization vectors l obtained by
introducing spherical polar coordinates has been used. Finally, we have calculated phonon
conductivity K for As- and P-doped silicon with Nex
> Nc. Good agreement with the experimental result
of M. E. Brinson and W. Dunstan has been obtained.
PACS numbers: 63.20.Kr, 66.70.+f
UDC 536.21
Keywords: electron-phonon interaction, phonon conductivity, semiconductors
|
