FIZIKA A 15 (2006) 1 , 25-34

DEPOLARIZATION CROSSOVERS IN THE MICROWAVE RESPONSE OF SILICON CRYSTALS IN SLAB GEOMETRY

BAKIR BABIĆ^a, MARIO BASLETIĆ^b, ANTONIJE DULČIĆ^b and MIROSLAV POŽEK^b

^aETH Hönggerberg, Institute of Quantum Electronics, CH-8093 Zürich, Switzerland
^bDepartment of Physics, Faculty of Science, POB 331, HR-10001 Zagreb, Croatia

Dedicated to the memory of Professor Zvonko Ogorelec

Received 28 September 2004;  Accepted 31 January 2005
Online 10 November 2006

Microwave cavity perturbation measurements have been performed on several n-type silicon samples with different depolarization factors due to sample geometries. The general solution for the complex frequency shift in slab geometry is discussed for the specific case of semiconductors. The depolarization crossovers predicted by the theory have been experimentally observed. Their relative intensities suggest that the imaginary part of the complex conductivity of semiconductors has to be taken into account. Electron scattering time has been inferred from the microwave measurements.

PACS numbers: 72.30.+q, 72.80.Cw, 72.20.-i
UDC 537.86, 537.311.6

Keywords: n-type silicon, slab geometry, microwave measurement, complex frequency shift, depolarization factors, electron scattering time

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