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FIZIKA A 18 (2009) 4 , 165-172
 
MAGNETO-OPTICAL PROPERTIES OF THE ALLOY SYSTEM In1-xGaxP
M. S. OMARa and S. O. YOUSIFb
aDepartment of Physics, College of Science, University of Salahaddin,
Arbil,Iraqi Kurdistan, Iraq
E-mail address:
dr_m_s_omar@yahoo.com
bDepartment of Physics, College of Education, University of Dohuk,
Dohuk, Iraqi Kurdistan, Iraq
Received 2 April 2009; Revised manuscript received 10 November
2009
Accepted 16 December 2009 Online 22 December 2009
The room-temperature dependence on composition of the energy gap is measured
for the ternary alloy system In1-xGaxP semiconductors. The cross-over point from the direct to
indirect optical transition energy gap is found at x=0.718. An empirical
relation for the alloy system energy-gap dependence is found for both direct and
indirect transition regions. From the empirical relations belonging to the
direct region transition, the values of the expected indirect energy transition
at Gc1 are calculated. The difference
between these values and the corresponding indirect energy (Gc1-Xc1)
are also calculated. The change of Eg due to the effects of magnetic
field was also measured up to 1.6 T (Tesla). The magnetic coefficient is found
to be between 3.33×10-7 and 3.87×10-7
eV/T for x=0.31 to x=1. A clear deviation of the magnetic coefficient occurred
for the change from the direct-region to that of the indirect-region transition.
PACS numbers: 78.20.Ls, 78.30.Fs, 78.40.Fy, 78.55.Et
UDC 537.632
Keywords: III-V semiconductors; In1-xGaxP,
optical properties, magneto-optical properties
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