|
FIZIKA A 19 (2010) 2 , 73-82
 
SCHOTTKY DIODES FABRICATED ON ELECTROCHEMICALLY-GROWN ZnO NANORODS AND
MICRORODS
A. E. RAKHSHANIa, J. KOKAYa and A. Y. BUMAJDADb
aPhysics Department, Faculty of Science, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait
bChemistry Department, Faculty of Science, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait
Received 26 March 2009; Accepted 2 June 2010
Online 12 July 2010
Aligned ZnO nanorods grown on polycrystalline substrates have promising
optoelectronic applications. Novel samples with such structures were
electrodeposited on stainless foil from a ZnCl2 route. Well-aligned
and free-standing hexagonal nanorods with 100 nm diameter and closely-packed
microrods with a diameter above 1 mm could be grown
normal to the substrate. The optical transition energies (absorption and
emission) of samples were determined by transmittance and photoluminescence
spectroscopy. We report on the fabrication of high-quality Ag-Schottky diodes
formed on the oxygen-treated (002) facets of microrods. Diodes with a large
barrier height (1.1 eV), low saturation current density (1.3 pA/cm2)
and high rectification factor (5×106 at ±3
V) were fabricated. The concentration and mobility of free electrons in
oxygen-treated microrods were measured as 1.4×1014cm-3
and 1.2 cm2V-1s-1, respectively.
PACS numbers: 73.30.+y, 85.30.Kk
UDC 537.311
Keywords: hexagonal ZnO nanorods, oxygen-treated (002) facets, high-quality
Ag-Schottky diodes, high rectification factor, large barrier height, low
saturation current density
|
