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FIZIKA A 1 (1992) 2, 113-121
EFFECT OF ELECTRON-IRRADIATION ON ELECTRON-BEAM EVAPORATED GaAs FILMSWAFEYA Z. SOLIMAN Received 15 January 1990Transmission electron microscopy and diffraction investigations showed that gallium arsenide films, deposited on amorphous substrates by electron-beam evaporation, are polycrystalline consisting of extremely fine grains. During TEM examination the GaAs films decompose into Ga and As, as revealed from the analysis of electron diffraction patterns. The decomposition is attributed to the combined effect of the ionization and thermal effect of the electron beam. UDC 621.315
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Copyright by The Croatian Physical Society
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