FIZIKA A 1 (1992) 3, 197-205

ON THE ELECTRIC SUSCEPTIBILITY MASS IN A3IIB2V SEMICONDUCTORS IN THE PRESENCE OF AN ARBITRARILY ORIENTED QUANTIZING MAGNETIC FIELD

KAMAKHYA PRASAD GHATAK
Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, University of Jadavpur, Calcutta 700032, India

Received 23 January 1992

An attempt is made to investigate the electric susceptibility mass of electrons in A3IIB2V materials under arbitrary magnetic quantization by including the influence of spin and broadening of Landau levels, respectively. It is found, taking n-Cd3P2 as an example, that the same mass oscillates with inverse quantizing magnetic field and also with the angle of orientation of the same field. Besides, the same mass increases with increasing carrier degeneracy and the crystal field splitting parameter enhances the numerical magnitudes in all the three variations. The corresponding results for the three-band Kane model, the two-band Kane model and that of parabolic energy bands have also been obtained as special cases of our generalized derivation.

UDC 538.915

 

 

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