FIZIKA A 2 (1993) 1, 11-22

PROPERTIES OF AMORPHOUS AND CRYSTALLINE p-CuInSe₂ THIN FILMS

TOUSON A.HENDIA, HAMDIA A.ZAYED^*, AZIZA A.ABO EL SOUD, MOHEY A. KENAWY^* and LAILA I.SOLIMAN
Solid State Physics Lab., National Research Centre, Dokki, Cairo, Egypt
^* University College for Girls, Ain Shams University, Cairo, Egypt

Received 11 May 1992

Original scientific paper

Structural and optical properties of amorphous and crystalline p-CuInSe₂ thin films of different thicknesses were studied. The effect of annealing temperature on these properties were investigated. The thin films were prepared by thermal vacuum evaporation of the bulk. The films were investigated by X-ray diffraction and electron microscope technique. The lattice constants for p-CuInSe₂ in powder form were found to be a=0.5766 nm and c=1.1329 nm. The optical constants (refractive index n, absorption index k and absorption coefficient a, valence band density of states g_i and dielectric constants e^', e^'') were determined. The analysis of the optical absorption spectra revealed the existence of three optical transition mechanisms: allowed direct transition with E_g^d₁=1.014 eV, forbidden direct transition with E_g^d₂=1.14 eV and indirect transition with E_gⁱ=1.082 eV. The optical constants n, k, e', e'' and g_i found to depend on the annealing temperature. The d.c. conductivity was measured as a function of the temperature and the data were analysed in order to establish the conduction mechanism in the measured temperature range.

UDC 538.95

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