FIZIKA A 2 (1993) 3, 133-144

ON THE BAND-TAIL SPREADING ENERGY IN HEAVILY DOPED LASER DIODES UNDER DIFFERENT PHYSICAL CONDITIONS

KAMAKHYA PRASAD GHATAK
Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, University of Jadavpur, Calcutta 700032, India

Received 12 May 1992

Original scientific paper

In this paper we have studied the band-tail spreading energy in heavily doped laser diodes in bulk specimens, in the presence of magnetic quantization and also under cross-field configurations. We have also computed the same energy in quantum wire lasers having degenerate electron concentration forming band tails. The investigations are based on a newly formulated electron dispersion law of laser materials having highly degenerate carrier concentration. It is found, taking InSb junction laser as an example of a heavily doped laser diode, that the band tail spreading energy oscillates as a function of the inverse magnetic field, increases with increasing carrier density and increasing electric field in the respective cases. Under 2D and 1D quantizations, the same energy decreases with increasing film thickness in an oscillatory way and the heavy doping affects significantly the values of the band tail spreading in all types of quantum confinement. In addition, we have suggested the experimental procedure of determining the band tail spreading energy for laser materials having arbitrary band structure.

UDC 538.915

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