FIZIKA A 3 (1994) 2, 77-90

A SIMPLE ANALYSIS OF THE BURSTEIN-MOSS SHIFT IN ULTRATHIN FILMS OF BISMUTH IN THE PRESENCE OF CROSSED ELECTRIC AND QUANTIZING MAGNETIC FIELDS

SAMBHUNATH BANIK^*, KAMAKHYA P. GHATAK^**and SAMBHUNATH BISWAS
Department of Electronics and Telecommunication Engineering, Bengal Engineering College, Howrah 711103, Post Botanic Garden, West Bengal, India
^*Department of Physics, Belgachia Monohar Academy, 64/77, Belgachia Road, Calcutta 700037, India
^**Department of Electronic Science, University of Calcutta, 92 Acharya Prafulla Chandra Road, University College of Science and Technology, Calcutta-700009, India

Received 15 June 1993

We present a simple theoretical analysis of the Burstein-Moss shift in ultrathin films of bismuth in presence of crossed electric and quantizing magnetic fields in the presence of spin and broadening of Landau levels. The numerical results are presented for McClure and Choi, hybrid, Cohen, Lax and ellipsoidal parabolic energy band models. It was found that the shift increases for thinner films and in weaker magnetic field. In addition, the shift increases with increasing electron concentration, and the quantum oscillations, in accordance with the Mc Clure and Choi model, show up much more significantly than with other models of bismuth.

UDC 538.975
PACS 73.50.Fq, 73.61.Cw

Copyright by The Croatian Physical Society
For problems or questions please contact fizika@fizika.hfd.hr