FIZIKA A 4 (1995) 2, 191-197

Pb/Si(111)1×1-H SCHOTTKY BARRIER HEIGHT

JOZEF OSVALD¹, KAROL HRICOVINI², GUY LE LAY³
and VIKTOR YU. ARISTOV^3,4
1Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9,
842 39 Bratislava, Slovakia
²Laboratoire pour l'Utilisation du Rayonnement Electromagnetique, Centre Universitaire Paris-Sud, Bat. 209 D, F-91405 Orsay Cedex, France
³Centre de Recherche sur les M\' ecanismes de la Croissance Cristalline - Centre National de la Recherche Scientifique, Campus Luminy, Case 913, F-13288 Marseille Cedex 09, France
⁴Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow Distr., Russia, 142432.

Received 7 April 1995
Revised manuscript received 2 June 1995

We studied Schottky barrier height of lead on n- and p-type ideally terminated Si(111)1×1-H unreconstructed surface by electrical measurements and X-ray photoelectron spectroscopy (XPS). The hydrogenation of the Si(111) surface was done by means of wet etching in HF and NH₄F. The deposition of Pb was made under ultrahigh vacuum conditions. There are differences between the barrier heights from the I-V and from the XPS measurements. The reasons seem to be a bad wettability of Pb to Si(111)1×1-H and a possible surface reconstruction of Si under the thicker metal film.

UDC 538.93
PACS 73.30.+y

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