FIZIKA A 4 (1995) 2, 199-204

PROPERTIES OF MULTILAYER MATERIALS IRRADIATED BY HIGH NEUTRON FLUENCES

DANIEL RAJNIAK, LADISLAV HARMATHA, MILAN ŽIŠKA, OTTO CSABAY and VIERA DUBRAVCOVÁ
Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, STU, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

Received 7 April 1995

Multilayer materials based on silicon were exposed to fast neutrons with fluences ranging from 10¹⁵ to 10¹⁹ n/cm². C-V, deep level transient spectroscopy (DLTS) and I-V measurements were carried out to analyse the properties of the respective layers as well as the SiO₂-(n-type)silicon and metal-(n-type)silicon interfaces. The detected divacancies and E-centres are likely the main cause of carrier reduction that has been found to depend on the initial doping concentration of the layer. This study has proven that both investigated interfaces exhibit radiation induced interface traps.

UDC 538.97
PACS 61.72.Dd, 61.72.Hk

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