|
| |
FIZIKA A 4 (1995) 2, 225-232
 
EPR STUDY OF HYDROGEN-RICH SILICON OXYNITRIDE FILMS
BRANKO PIVAC*, BORIS RAKVIN*, ALESSANDRO BORGHESI**
and ADELE SASSELLA***
*R. Bokoviĉ Institute, P.O. Box 1016, HR-41000 Zagreb, Croatia
**Dipartimento di Fisica, Universitá degli Studi, I-41100 Modena, Italy
***Dipartimento di Fisica Ä. Volta, Universitá degli Studi, I-27100 Pavia,
Italy
Received 7 April 1995
Revised manuscript received 12 June 1995
We studied hydrogen rich silicon oxynitrides deposited from nitrous oxide and silane
gas mixture by a plasma enhanced chemical vapour deposition apparatus on single crystal
silicon substrates. Annealing study showed that hydrogen outdiffusion depends on the film
composition and is particularly retarded for oxygen content x = 1.4. EPR analysis
demonstrated that this film contains the highest concentration of D centres. However, the
maximum concentration of charged dangling bond-like centres does not coincide with D
centres. Therefore, we conclude that D centres act as hydrogen traps and are responsible
for the peculiar hydrogen behaviour observed in the studied films.
UDC 538.93
PACS 68.10.Cb, 68.55.Ln
|
