FIZIKA A 4 (1995) 2, 225-232

size 210 kB

EPR STUDY OF HYDROGEN-RICH SILICON OXYNITRIDE FILMS

BRANKO PIVAC*, BORIS RAKVIN*, ALESSANDRO BORGHESI** and ADELE SASSELLA***
*R. Boškoviĉ Institute, P.O. Box 1016, HR-41000 Zagreb, Croatia
**Dipartimento di Fisica, Universitá degli Studi, I-41100 Modena, Italy
***Dipartimento di Fisica Ä. Volta, Universitá degli Studi, I-27100 Pavia, Italy

Received 7 April 1995
Revised manuscript received 12 June 1995

We studied hydrogen rich silicon oxynitrides deposited from nitrous oxide and silane gas mixture by a plasma enhanced chemical vapour deposition apparatus on single crystal silicon substrates. Annealing study showed that hydrogen outdiffusion depends on the film composition and is particularly retarded for oxygen content x = 1.4. EPR analysis demonstrated that this film contains the highest concentration of D centres. However, the maximum concentration of charged dangling bond-like centres does not coincide with D centres. Therefore, we conclude that D centres act as hydrogen traps and are responsible for the peculiar hydrogen behaviour observed in the studied films.

UDC 538.93
PACS 68.10.Cb, 68.55.Ln
Copyright by The Croatian Physical Society
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