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FIZIKA A 4 (1995) 2, 287-294
 
DEPTH PROFILING BY MEANS OF TOTAL ELECTRON YIELD MEASUREMENTS
HORST EBEL*, ROBERT SVAGERA* and ROLAND KAITNA**
*Institut für Angewandte und Technische Physik, Technische Universität
Wien, Wiedner Hauptstrasse 8-10, A-1040 Wien, Austria,
**Rokappa Laborinstrumente Ges.m.b.H., Krichbaumgasse 31, A-1120 Wien, Austria
Received 7 April 1995
Revised manuscript received 5 June 1995
Total electron yield (TEY) is frequently used for EXAFS measurements. A theoretical
correlation of the jump-like increase of TEY in the vicinity of an absorption edge to the
composition c and the thickness t of a multicomponent layer allows a quantification of c
and t in analogy to XRF. We performed experiments and calculations on thin layers of AlxGa1-xAs
on GaAs substrates and confirmed the validity of the theoretical approach in the range 0.2 < x < 0.6 and 20 nm < t < 120 nm. Thus, TEY is an
excellent candidate for quantitative surface analysis in the nanometer range.
UDC 538.985
PACS 78.70.Dm
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