FIZIKA A 4 (1995) 2, 329-335

THERMAL STABILITY OF AMORPHOUS SILICON-CARBON ALLOYS DEPOSITED BY MAGNETRON SOURCE

DAVOR GRACIN, NIKOLA RADIĆ, UROŠ V. DESNICA, ŽELJKO ANDREIĆ and DAVOR BALZAR
Rudjer Bošković Institute, POB 1016, Bijenička 54, 10000 Zagreb, Croatia

Received 7 April 1995

Amorphous a-Si_0.85C_0.15:H and a-Si_0.6C_0.4:H alloys were deposited onto a non-heated substrate using a magnetron source. The samples were exposed to a sequential iso-chronal thermal annealing up to 1000 ^° C in a vacuum chamber, and were investigated by the IR spectroscopy and X-ray diffraction measurements. The influence of the thermal treatment on structural ordering was monitored by the evolution of the intensity and shape of the spectral IR lines corresponding to the Si-H and Si-C bonds. At low temperatures, the most pronounced features were accompanied with hydrogen evolution which completes up to 400 ^° C. Up to 800 ^° C the Si-C absorption lines have gradually changed their shape, peak position and intensity. At 900 ^° C, the abrupt changes occured, denoting final transition to crystalline state.

UDC 539.215
PACS 68.60.Dv

Copyright by The Croatian Physical Society
For problems or questions please contact fizika@fizika.hfd.hr