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FIZIKA A 4 (1995) 2, 337-342
 
INVESTIGATION OF REACTIVELY SPUTTERED NbN FILMS
IVAN HOTOVY, JOZEF BRCKA and JOZEF HURAN*
Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 812 19
Bratislava, Slovakia
*Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska 9,
842 39 Bratislava, Slovakia
Received 7 April 1995
Revised manuscript received 11 June 1995
We have investigated the structural properties of thin films of reactively magnetron
sputtered niobium nitride (NbN) under high-temperature annealing (with annealing
temperatures ranging 850 to 950 ° C) and with
different nitrogen contents in the working gas mixture. Prepared NbN films were
characterized by Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The
influence of rapid thermal annealing (RTA) on a change of the structure properties and
surface morphology was investigated. The correlation between technological parameters and
film properties, structure and composition were established.
UDC 538.975
PACS 68.55.Jk, 81.15.Cd
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