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FIZIKA A 4 (1995) 2, 351-360
EFFECT OF DEPOSITION RATE ON THE STRUCTURE AND RESISTIVITY OF SPUTTERED Ti FILMSJINDŘICH MUSIL, ALBERT J. BELL, ANTONÍN RAJSKÝ, MILAN ČEPERA*
Received 7 April 1995The new generation of low pressure and high-deposition rate magnetrons make it possible to investigate the effect of decreasing the operating pressure and the deposition rate (aD) on the properties of sputtered films. This knowledge is of principal importance for the industrial scaling of the sputtering process, i.e. to further increase aD and thereby reduce the production time. The paper reports on the effect of the operating pressure (p) and aD on the structure and electrical resistivity of Ti films which were deposited onto glass substrates held at the floating potential, by the magnetron sputter ion plating (MSIP) process, using an unbalanced d.c. magnetron. The deposition rate varied from 0.03 to 0.45 mm/min, depending on the magnitude of the discharge current Id. The structure of Ti films, specifically the crystallographic orientation, grain size and microdeformation, were determined from XRD analyses. The results obtained indicate that the effect of decreasing the operating pressure during the sputtering of films onto substrates at the floating potential, is equivalent to the MSIP of films onto biased substrates at p of about 0.5 to 1 Pa, currently utilized in conventional sputtering. This is due to the increased role played by fast neutrals at low p. A further increase of aD above 0.7 mm/min results in a dramatic change in the orientation of the crystallites from (002) to (010) when a particular threshold of target power density is exceeded. This result is of great practical importance. UDC 538.975
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Copyright by The Croatian Physical Society
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