FIZIKA A 4 (1995) 2, 373-380

PROPERTIES OF VACUUM DEPOSITED Ag₂Se THIN LAYERS

KAROLY SOMOGYI and GYÖRGY SAFRAN
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O.B. 76., H-1325 Hungary

Received 7 April 1995

A recent vacuum deposition method using the topotaxial reaction of Ag and Se allowed us preparation of both epitaxial and polycrystalline Ag₂Se layers on NaCl and silica substrates. Low temperature and reproducibility of Ag₂Se layers facilitate investigation of this ionic semiconductor. The formation and the reversible phase transition (orthorhombic - cubic) of Ag₂Se films are revealed by transmission electron microscopy. Galvanomagnetic properties of 87 nm thick layers with different carrier concentrations were investigated in the temperature range of 77 - 430 K. Properties of poly- and monocrystalline samples are compared. Influence of the phase transformation on the electrical properties are shown.

UDC 538.975
PACS 72.20.Ly, 73.61.Le

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