FIZIKA A 4 (1995) 2, 389-395

PRELIMINARY INVESTIGATION OF Ag/n-Si(111) SCHOTTKY PHOTODIODE PREPARED BY IONIZED-CLUSTER-BEAM DEPOSITION

BRUNO CVIKL, TOMO MRĐEN, MATJAŽ KOŽELJ and DEAN KOROŠAK
Faculty of Civil Engineering, University of Maribor and "J. Stefan'' Institute, University of Ljubljana, Ljubljana, Slovenija

Received 7 April 1995

Photocharacteristics in the visible region of Ag/n-Si(111) Schottky photodiode, prepared by ionized-cluster-beam deposition for Ag⁺ acceleration voltage equal to zero, have been measured. High quantum efficiency (up to 85%) and responsitivity of 0.35 A/W, when operating in the reversed bias regime, was observed. For low reverse voltages V_r < 1 V, the photocurrent measurements exhibit strong, unusual voltage dependence of the depletion layer width. The I-V data in this regime could be well fitted by an expression proportional to 1-exp(-KV_r³), where K is a wavelength dependent constant. No satisfactory explanation of the observations could be presently provided.

UDC 538.93
PACS 73.30.+y, 85.60.Dw

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