FIZIKA A 4 (1995) 2, 397-401

ELASTIC REFLECTION SPECTRA ON POROUS p-TYPE SILICON LAYER (PSL) SURFACE

CHRISTINE ROBERT^*, BERNARD GRUZZA^*, LUC BIDEUX^*, GYÖRGY GERGELY^**, MIKLOS MENYHARD^** and EVA VAZSONYI^***
*LASMEA, Universite Blaise-Pascal de Clermont-Ferrand. F-63177 Aubiere, France
^**Res. Inst. Technical Physics, Hung. Acad. Sci., H-1325 Budapest, POB 76, Hungary
^***KFKI Mat. Res. Inst., Hung. Acad. Sci. H-1525 POB 49, Hungary

Received 7 April 1995

PSL samples have been formed on p type Si(100) wafers by an electrochemical procedure. The dependence of the elastic electron reflection coefficient, r_e(E), on porosity (P) was determined by elastic peak electron spectroscopy (EPES). The spectra were measured in absolute units (%) with a retarding field analyser and spectrometer corrections. They exhibited systematic decrease of intensity with porosity. HF treatment of samples produced a dramatic decrease of r_e(E) in the low energy (40-100 eV) range, due to removal of the native SiO₂ and formation of Si-H bonds on the surface. It can be explained by multiple elastic reflection and attenuation of electrons by H adatoms on the pore walls. The constribution of pores to r_e(E) was considerable and increasing with porosity. The porous layers and interfaces have been studied by Auger electron spectroscopy (AES) with Ar⁺ ion bombardment depth profiling of high resolution.

UDC 538.971
PACS 79.20.-m, 81.15.Pq

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