FIZIKA A 4 (1995) 2, 431-437

Ir-Al BIMETALLIC SCHOTTKY CONTACT SYSTEMS ON GaAs

TIBOR LALINSKÝ, JOSEF OSVALD, ŽELIMIRA MOZOLOVÁ,
JOSEF ŠIŠOLÁK and GEORGE CONSTANTINIDIS^*
Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9,
842 39 Bratislava, Slovakia
^*FORTH, Institute of Electronic Structure & Laser, P.O.Box 1527, 711 10 Heraklion, Crete, Greece

Received 7 April 1995

We report on novel Ir-Al/GaAs Schottky contact systems based on sequentially evaporated Ir-Al bimetallic multilayers. Electrical and thermal stability of these contact systems are investigated by I- V measurements and Auger depth profiling method. An increase of the barrier height with annealing temperature has been indicated for all Schottky contacts. A model of the barrier height enhancement based on a solid phase epitaxy of a graded Al_xGa_1-xAs layer at the interface at elevated temperatures was used to explain the electrical and the thermal stability of the contacts. A method of controlling of the barrier height and of the thermal stability of the Ir-Al/n-GaAs interface is proposed.

UDC 538.93
PACS 73.30.+y

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