FIZIKA A 5 (1996) 1, 31-40

A SIMPLE THEORETICAL ANALYSIS OF THE MAGNETO-GATE CAPACITANCE IN MOS STRUCTURE OF p-CHANNEL INVERSION LAYERS ON TELLURIUM

KAMAKHYA P. GHATAK and SAMBHU N. BANIK^*
Department of Electronic Science, University of Calcutta, University College of Science and Technology, 92 Acharya Prafulla Chandra Road, Calcutta 700 009, India
^* Department of Physics, Dandirhat Nagendra Kumar Uchcha Siksha Niketan, P.O. Dandirhat, Dt. North 24 Parganas, West Bengal, India

Received 24 February 1995

An attempt is made to study the gate capacitance of MOS structure of p-channel inversion layers on tellurium in the presence of a quantizing magnetic field by considering all types of anisotropies of the valence bands of tellurium within the framework of [k\vec]·[p\vec]  theory. We have derived an analytical expression of the surface electron concentration in low electric field limit in the presence of a quantizing magnetic field. We have then formulated a model expression of the magneto-gate capacitance with the proper use of the electron concentration. For the purpose of relative comparison, we have also derived the same capacitance by including the broadening effects and without any approximations of low or high electric field limits. It has been observed that the gate capacitance of p-channel inversion layers on tellurium exhibits spiky oscillations with changing magnetic field. The corresponding well-known results for p-channel inversion layers on parabolic energy bands have also been obtained under certain limiting conditions from the generalized expressions.

UDC 538.915
PACS 71.20.Cf

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