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FIZIKA A 6 (1997) 2, 61-66
 
CONCENTRATION PROFILES OF ELEMENTS AND STRUCTURE OF a-Si1-xNx:H
FILMS
VITALIY GERASIMOV and VLADIMIR MITSA
Uzhgorod State University, Department of Solid-State Electronics, 294000 Uzhgorod, 32
Voloshyn str., Ukraine
Received 19 September 1996
Revised manuscript received 27 January 1997
SIMS profiles of a-Si1-xNx:H films having different composition
have been measured. The distribution of hydrogen in nitrided films bears a fluctuating
character and its whole content decreases at x < 0.06. In
all films, Na impurity is observed and its content on the film surface exceeds that of all
other components. In the region of small contents of nitrogen, the position of the
absorption edge in a-Si1-xNx:H films does not change with respect to
its position in a-Si:H. According to the analysis of IR spectra of a-Si1-xNx:H
near Si-N bonds, different surroundings are realized.
UDC 538.975, 539.23
PACS 68.55.Jk, 78.66.-w
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