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FIZIKA A 6 (1997) 2, 97-102
 
SILICON SURFACE IRRADIATED BY NITROGEN LASER RADIATION
VIŠNJA HENČ-BARTOLIĆa, ŽELJKO ANDREIĆb, DAVOR
GRACINb, HANS-JOACHIM KUNZEc and MIRKO STUBIČARd
a Dept. of Applied Physics, Faculty of Electrical Engineering
and Computing, University of Zagreb, Unska 3, HR-10000 Zagreb, Croatia
b Laboratory for Ionized Gases, Division for Material Research and Electronics,
Dept. of Physics, Rudjer Bošković Institute, Bijenička 54, HR-10000 Zagreb, Croatia
c Ruhr-Universität Bochum, Fakultät für Physik und Astronomie, Institut für
Experimentalphysik V, D-44780 Bochum, Germany
d Dept. of Physics, Faculty of Science, University of Zagreb, Bijenička 32,
HR-10000 Zagreb, Croatia
Received 28 March 1997
Revised manuscript received 20 May 1997
This paper is dedicated to Professor A. Bonefačić on the occasion
of his 70th birthday
Monocrystalline silicon target was irradiated with a nitrogen laser beam (l = 337 nm, maximum energy density 1.1 J/cm2, pulse
duration 6 ns and repetition rate 0.2 Hz). The plasma formed at the silicon surface was
observed spetroscopically in air (ne = 3×1018 cm-3, Te
= 18 500 K) and in vacuum (ne = 6.5×1017 cm-3, Te
= 16 000 K). The irradiated surface in vacuum was studied by a metallographic microscope.
Droplets were created at crater edges. Their formation is explained by the hydrodynamical
sputtering model.
UDC 533.9
PACS 52.50.Jm, 61.80.Ba
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