SOME STUDIES ON CHEMICALLY AND THERMALLY PREPARED CuInS₂ FILMS

SIHAM MAHMOUD and ABDEL-HAMID EID

Electron Microscope and Thin Film Department, National Research Centre, Cairo, Egypt

Received 7 July 1997

Copper indium disulfide (CuInS₂) thin films were thermally and chemically prepared, and the structural, optical and electrical properties were investigated. X-ray analysis indicates only single-phase chalcopyrite with no extra planes. The optical and the thermal energy gap was determined. The gap of the annealed thermally-prepared samples in sulfur vapour is greater than of the as-deposited films, which indicates the decrease of d-level contribution to the valence band.

UDC 538.975
PACS numbers: 73.61.Jc, 78.66.-w

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