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FIZIKA A 7 (1998) 3, 107-118
 
MODIFIED TWO-DIMENSIONAL ANALYTICAL MODEL FOR CURRENT-VOLTAGE AND
BREAKDOWN VOLTAGE CHARACTERISTICS OF GaAs MESFET PLANAR STRUCTURE
RIFAT RAMOVIĆa and ROBERT ANDRINb
e-mail: ramovic@kiklop.etf.bg.ac.yu
aFaculty of Electrical Engineering, Bulevar Revolucije 73, 11120
Belgrade, Yugoslavia
b"Telekom Srbija" a.d., Department of Mobile Communications,
Takovska 2,
11000 Belgrade, Yugoslavia
Received 5 January 1998;
Accepted 30 September 1998
We present an analytical approach for modelling the planar structure of GaAs MESFET's
with the aim to determine current-voltage characteristics and breakdown voltage for
reverse gate-drain bias. With the two-dimensional analytic solutions, we can determine the
electric potential and field, and carrier and velocity profiles in the device. The results
of simulation are compared with the available experimental data.
PACS numbers: 72.20.-i, 85.30.Tv
UDC 537.311, 537.539
Keywords: planar MESFET structure, two-dimensional solution, electric potential and field,
current-voltage characteristics, breakdown voltage
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