FIZIKA A 2 (1993) 2, 59-70

A SIMPLE ANALYSIS OF THE THERMOELECTRIC POWER IN QUANTUM WIRES OF NON-PARABOLIC SEMICONDUCTORS IN THE PRESENCE OF CROSSED ELECTRIC AND MAGNETIC FIELDS

KAMAKHYA PRASAD GHATAK
Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, University of Jadavpur, Calcutta 700032, India

Received 17 March 1992

Original scientific paper

In this paper a study is made of the thermoelectric power of electrons in quantum wires of nonparabolic semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derived electron dispersion law considering all types of anisotropies of the energy spectrum. It is found, taking n-CdGeAs₂ as an example, that the thermopower increases with increasing film thickness, magnetic field and electric field, respectively. The crystal field splitting enhances the thermopower with respect to all physical variables. In addition, the corresponding expressions for quantum wires of parabolic semiconductors have also been obtained from our generalized analysis under certain limiting conditions.

UDC 583.93

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