FIZIKA A 4 (1994) 55-63

TENSILE AND ELECTRICAL PROPERTIES OF Al-Si ALLOYS UNDER COMBINED TORSION-TENSION DEFORMATION

TAWFICK H. YOUSSEF, FARDOS A. SAADALAH and ISIS K. BISHAY
Metal Physics Unit, Solid State Physics Department, National Research Centre, Dokki, Cairo, Egypt

Received 19 October 1994

The relation between tensile strain DL/L₀ and the relative change in resistance DR/R₀ caused by torsion-tension deformation for Al-Si samples pre-annealed at different temperatures (room temperature up to 773 K) was studied. The empirical relation DL/L₀ = kDR/R₀ was found, where k is a constant depending on the silicon content and its distribution in the matrix.

UDC 538.95
PACS 62.20.-x, 72.15.-v

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