FIZIKA A 5 (1996) 3, 111-126

ON THERMOELECTRIC POWER IN n-CHANNEL INVERSION LAYERS ON TETRAGONAL MATERIALS IN THE PRESENCE OF A PARALLEL MAGNETIC FIELD

KAMAKHYA P. GHATAK, SANDIP BERA, ASHFAQUE ALI and BHASKAR NAG^a
Department of Electronic Science, University of Calcutta, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta 700009, India
^aDepartment of Applied Physics, University of Calcutta, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta 700009, India

Received 13 July 1995

We present a simplified analysis of thermoelectric power of carriers in n-channel inversion layers on tetragonal materials under the limits of weak and strong electric field, in the presence of a parallel magnetic field, at low temperatures. Taking n-channel inversion layers of CdGeAs₂ as an example, on the basis of a newly formulated 2D generalized electron energy spectra within the framework of [k\vec][p\vec] formalism incorporating various anisotropies of the energy band constants, it is found that thermoelectric power increases with decreasing surface electric field for both limits in oscillatory manners which are totally band structure dependent. The crystal field splitting reduces its numerical values. The thermopower exhibits oscillatory increment with increasing alloy composition for 2D system of ternary materials. The corresponding well-known results for the two-band Kane model in the absence of magnetic field have been obtained under certain limiting conditions as special cases of our generalized analysis.

UDC 538.93
PACS 72.15.Jf

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