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FIZIKA A 7 (1998) 4, 177-186
 
A MONTE-CARLO COMPUTER SIMULATION METHOD OF CONTINUOUS NETWORK MODELS
OF AMORPHOUS GERMANIUM THIN FILMS
CORNELIU IOAN STNESCU
University of Bucharest, Faculty of Chemistry, Physics Department,
13 Carol Boulv., Bucharest 70346, Romania
E-mail:stanescu@math.math.unibuc.ro stanescu@funinf.math.uibuc.ro
Received 25 August 1998; revised manuscript received 16 February 1999
Accepted 8 March 1999
A practical computer simulation of the network models of amorphous semiconductors,
using the Monte-Carlo method, has been developed. A randomly chosen atom of the structure
is slightly displaced by a random amount and in a random direction. After each move, the
potential energy of the amorphous structure is calculated, and the new position is
retained in the case of decrease of energy. The iterative procedure was stopped when the
energy did not decrease any more. The model is tested by the radial distribution functions
before and after the computation and compared to the experimental data from X-ray
diffraction.
PACS numbers: 61.43.Dq, 68.55.Jk
UDC 538.975, 539.213
Keywords: network model of amorphous semiconductor, computer simulation, Monte-Carlo
method, displacements in random directions and of random amplitudes, energy minimization
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